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Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients

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Copyright (c) 1988 The Japan Society of Applied Physics
, , Citation Chusuke Munakata et al 1988 Jpn. J. Appl. Phys. 27 1770 DOI 10.1143/JJAP.27.1770

1347-4065/27/9R/1770

Abstract

Ac surface photovoltages in a CZ-grown p-type silicon wafer oxidized with water-free dry oxidation deviate from the normal inverse frequency characteristics observed in the wafer oxidized with the conventional wet oxidation. This is because of dense interface traps inherent to the water-free oxidation.

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10.1143/JJAP.27.1770