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Geometrical Correction Factor for Resistivity of Semiconductors by the Square Four-Point Probe Method

Copyright (c) 1986 The Japan Society of Applied Physics
, , Citation Masato Yamashita 1986 Jpn. J. Appl. Phys. 25 563 DOI 10.1143/JJAP.25.563

1347-4065/25/4R/563

Abstract

The geometrical correction factor for the resistivity of semiconductors is derived for a system consisting of a square four-point probe array on a rectangular parallelepied. The van der Pauw method requires the geometrical correction factor for samples with a thickness greater than about 35% of the probe separation. Numerical evaluations are given as a function of the size of the rectangular parallelepiped and the probe configuration.

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10.1143/JJAP.25.563