New Selective Deposition Technology by Electron Beam Induced Surface Reaction

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Copyright (c) 1984 The Japan Society of Applied Physics
, , Citation Shinji Matsui and Katsumi Mori 1984 Jpn. J. Appl. Phys. 23 L706 DOI 10.1143/JJAP.23.L706

1347-4065/23/9A/L706

Abstract

A new selective deposition technology by electron beam induced surface reaction has been demonstrated. Cr line patterns were deposited using Cr(C6H6)2 as a source. Cr deposition was confirmed by analysis using XMA and AES. The deposited thickness is proportional to electron beam dose. A 0.15 µm linewidth Cr pattern was deposited at 5×10-7 C/cm. This technology will be important for nanometer structure fabrication and new structure devices.

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10.1143/JJAP.23.L706