Abstract
Indium-tin-oxide single crystals with 0–9 atomic% of Sn/In are produced by flux method, and their electrical properties are measured. At about 2 atomic% of Sn/In, the resistivity is 2×10-4 Ω-cm and the electron concentration is 3×1020/cm3 at room temperature. Further increase of Sn/In ratio does not change the electrical properties. The electron concentration is about 1/2–1/10 of the numbers of Sn atoms in the crystals. The value of electron mobility is about 100 cm2/V.s and independent with the atomic ratio of Sn/In. This value is about 5 times larger than the calculated one assuming the ionized impurity scattering in degenerate semiconductor.