Molecular Beam Epitaxy of In0.2Ga0.8Sb

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Copyright (c) 1982 The Japan Society of Applied Physics
, , Citation Hideki Gotoh et al 1982 Jpn. J. Appl. Phys. 21 L767 DOI 10.1143/JJAP.21.L767

1347-4065/21/12A/L767

Abstract

The MBE growth of In0.2Ga0.8Sb is examined. Undoped films show p-type conduction. Sulfur doped n-type In0.2Ga0.8Sb with H2S gas, which has a mobility of 3000–3500 cm2/V·sec, is obtained. The value is slightly lower than that of bulk In0.2Ga0.8Sb. This may be caused by lattice mismatch between GaAs substrate and In0.2Ga0.8Sb film. N-type In0.2Ga0.8Sb has two donor levels. The deeper one is associated with sulfur, and the other shallow one is similar to the donor level in undoped MBE InSb.

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10.1143/JJAP.21.L767