Abstract
The MBE growth of In0.2Ga0.8Sb is examined. Undoped films show p-type conduction. Sulfur doped n-type In0.2Ga0.8Sb with H2S gas, which has a mobility of 3000–3500 cm2/V·sec, is obtained. The value is slightly lower than that of bulk In0.2Ga0.8Sb. This may be caused by lattice mismatch between GaAs substrate and In0.2Ga0.8Sb film. N-type In0.2Ga0.8Sb has two donor levels. The deeper one is associated with sulfur, and the other shallow one is similar to the donor level in undoped MBE InSb.