Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

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Published 17 August 2012 • ©2012 The Japan Society of Applied Physics
, , Citation Liwu Lu et al 2012 Appl. Phys. Express 5 091001 DOI 10.1143/APEX.5.091001

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1 Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China

2 Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China

3 Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, P. R. China

4 Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China

Dates

  1. Received 26 June 2012
  2. Accepted 24 July 2012
  3. Published

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1882-0786/5/9/091001

Abstract

The heterostructure conduction band offset ΔEc in In0.08Ga0.92N/Al0.075In0.045Ga0.88N quantum wells (QWs) was characterized by capacitance–voltage (C–V) and deep-level transient spectroscopy (DLTS) measurements made on the QWs, which acted as the light-emitting active layer of GaN p–n light-emitting diodes (LEDs). The thermal emission energy of the In0.08Ga0.92N wells was found to be 0.21±0.01 eV. This corresponds to a conduction band offset of about 0.25±0.02 eV.

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