Abstract
The photovoltaic performance of a new type amorphous silicon solar cell with ITO/n-i-p/ss solar cell in which phosphorus-doped microcrystalline (µc) Si: H is applied as the window-side layer is described in conjunction with the optical properties of the µc-Si: H film. By applying this film, the short-circuit current in the cell is improved over 10% in comparison with that of a conventional ITO/n-i-p/ss cell. This improvement is explained by the high transparency of the µc-Si: H and by a new concept of "double AR effect" of the crystallized window-side layer which reduces the surface reflectance.