Abstract
In this paper, extraction method of electron band mobility in amorphous silicon thin-film transistor (a-Si TFT) is presented. First, we propose the mobility model considering the traps of amorphous silicon and the vertical field dependent mobility degradation. Then we calculate the ratio of effective mobility to band mobility by considering the traps. After that, the vertical field dependent mobility degradation is applied to the model using fitting parameters. Through this process, 13 cm2 V-1 s-1 of band mobility is extracted in our devices. Experimentally extracted electron band mobility of a-Si TFTs would be useful to technology computer aided design (TCAD) and simulation program with integrated circuit emphasis (SPICE).