Abstract
Hydrogenated In-doped ZnO (IZO:H) anodic films grown at different ratios (R) of hydrogen to argon were deposited at a low processing temperature of 100 °C on a glass substrate by pulsed DC magnetron sputtering for photovoltaic cells. Even at a low substrate temperature, the transparent electrode showed an average optical transmittance of 88% in the visible range and a reduced resistivity of less than 3.5×10-3 Ω·cm. The organic photovoltaic cells with an IZO:H (R=0.08) electrode achieved a maximum power conversion efficiency (η) of 0.53%, which is as good as the values of the control device fabricated on a commercial ITO electrode (η=0.48%). This indicates that the efficiency of the organic photovoltaic cells is critically affected by the injection of hydrogen gas during the deposition of IZO:H. The high quality IZO:H film developed herein is promising as an alternative to conventional ITO film.