Inverter Circuits using Pentacene and ZnO Transistors

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Published 24 April 2007 Copyright (c) 2007 The Japan Society of Applied Physics
, , Citation Hiroyuki Iechi et al 2007 Jpn. J. Appl. Phys. 46 2645 DOI 10.1143/JJAP.46.2645

1347-4065/46/4S/2645

Abstract

We report two types of integrated circuits based on a pentacene static-induction transistor (SIT), a pentacene thin-film transistor (TFT) and a zinc oxide (ZnO) TFT. The operating characteristics of a p-p inverter using pentacene SITs and a complementary inverter using a p-channel pentacene TFT and an n-channel ZnO TFT are described. The basic operation of logic circuits at a low voltage was achieved for the first time using the pentacene SIT inverter and complementary circuits with hybrid inorganic and organic materials. Furthermore, we describe the electrical properties of the ZnO films depending on sputtering conditions, and the complementary circuits using ZnO and pentacene TFTs.

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10.1143/JJAP.46.2645