Abstract
3C–SiC heteroepitaxy on Si using mass-selected ion beams has been performed, monitoring the surface structural evolution by reflection high-energy electron diffraction (RHEED). The root-mean-square (RMS) surface roughness of the grown 3C–SiC layer is ∼0.4 nm. The process temperatures of both carbonization and SiC epilayer formation are ∼670°C.