Ion-Beam 3C–SiC Heteroepitaxy on Si

, , , and

Copyright (c) 2002 The Japan Society of Applied Physics
, , Citation Nobuteru Tsubouchi et al 2002 Jpn. J. Appl. Phys. 41 7353 DOI 10.1143/JJAP.41.7353

1347-4065/41/12R/7353

Abstract

3C–SiC heteroepitaxy on Si using mass-selected ion beams has been performed, monitoring the surface structural evolution by reflection high-energy electron diffraction (RHEED). The root-mean-square (RMS) surface roughness of the grown 3C–SiC layer is ∼0.4 nm. The process temperatures of both carbonization and SiC epilayer formation are ∼670°C.

Export citation and abstract BibTeX RIS

10.1143/JJAP.41.7353