WO3 Thin Films Prepared by Pulsed Laser Deposition

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Copyright (c) 2002 The Japan Society of Applied Physics
, , Citation Fumiaki Mitsugi et al 2002 Jpn. J. Appl. Phys. 41 5372 DOI 10.1143/JJAP.41.5372

1347-4065/41/8R/5372

Abstract

We report the structural and gas sensing properties of tungsten trioxide (WO3) thin films prepared by the KrF excimer pulsed laser deposition technique. The WO3 thin films having amorphous, crystallized tetragonal and triclinic structures were fabricated at the oxygen pressure of 10–300 mTorr and the substrate temperature of 150–800°C. We revealed the effect of the oxygen pressure and substrate temperature during the deposition on the crystal phases of the WO3 thin films. The atomic force microscopy measurement shows that the average grain size and the average number of grains are approximately 200 nm and 8/µm2, respectively. The triclinic WO3 thin film with a thickness of 1 µm showed high sensitivity of 254 in NO (60 ppm) gas at a low operating temperature of 150°C.

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10.1143/JJAP.41.5372