Epitaxial Growth of γ-In2Se3 Films by Molecular Beam Epitaxy

, , , , and

Copyright (c) 2001 The Japan Society of Applied Physics
, , Citation Tomohiko Ohtsuka Tomohiko Ohtsuka et al 2001 Jpn. J. Appl. Phys. 40 509 DOI 10.1143/JJAP.40.509

Download Article PDF

Article metrics

337 Total downloads

Share this article

Author affiliations

1 Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

2 Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

3 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

Dates

  1. Received 27 April 2000
  2. Accepted 31 October 2000

Buy this article in print

Journal RSS
Sign up for new issue notifications
1347-4065/40/2R/509

Abstract

Epitaxial growth of γ-In2Se3 film was investigated by molecular beam epitaxy (MBE). γ-In2Se3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the γ-In2Se3 epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that γ-In2Se3 epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface. Furthermore, optical properties of the γ-In2Se3 epitaxial films were investigated by spatially resolved cathodoluminescence (CL).

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
10.1143/JJAP.40.509