Abstract
SiO vapor pressure concerning Czochralski (CZ) Si crystal growth has been measured successfully by an SiO2 glass/Si melt/SiO gas equilibrium system. A Si sample was sealed in a silica ampoule after being evacuated, and the ampoule was heated to a certain temperature ranging from 1450°C to 1540°C in an Ar atmosphere. SiO vapor pressure was determined from the balance of pressure between inside and outside the ampoule. The result shows that SiO vapor pressure increases with increasing temperature. It is also found that the SiO vapor pressure shifts slightly from that calculated from thermodynamic data, especially at higher temperatures.