Effect of Oxygen to Argon Ratio on Growth of Bi4Ti3O12 Thin Films on Ir and IrO2 Prepared by Radio-Frequency Magnetron Sputtering

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Copyright (c) 1999 The Japan Society of Applied Physics
, , Citation W. Jo et al 1999 Jpn. J. Appl. Phys. 38 2827 DOI 10.1143/JJAP.38.2827

1347-4065/38/5R/2827

Abstract

Bismuth titanate, Bi4Ti3O12, thin films were grown on Ir/SiO2/Si and IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show Pr = +15 µC/cm2 and +12 µC/cm2, respectively.

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10.1143/JJAP.38.2827