Correlation between Surface Microroughness of Silicon Oxide Film and SiO2/Si Interface Structure

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Copyright (c) 1997 The Japan Society of Applied Physics
, , Citation Masatoshi Ohashi Masatoshi Ohashi and Takeo Hattori Takeo Hattori 1997 Jpn. J. Appl. Phys. 36 L397 DOI 10.1143/JJAP.36.L397

1347-4065/36/4A/L397

Abstract

It was found, from combined measurements of the surface microroughness of silicon oxide film and the SiO2/Si interface structure, that the surface microroughness of thermal oxide film formed on a Si(111) surface changes periodically with the progress of oxidation in accordance with periodic changes in interface structures. Therefore, the changes in interface structures can be detected by measuring the oxidation-induced surface microroughness.

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