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Spatial Distribution and Surface Loss of CF3 and CF2 Radicals in a CF4 Etching Plasma

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Copyright (c) 1993 The Japan Society of Applied Physics
, , Citation Yukinobu Hikosaka et al 1993 Jpn. J. Appl. Phys. 32 L353 DOI 10.1143/JJAP.32.L353

1347-4065/32/3A/L353

Abstract

The absolute number density and the spatial distribution of CF3 and CF2 radicals in a radio-frequency CF4 plasma were measured using threshold-ionization mass spectrometry. The time constant of density decay in an afterglow was measured to be almost independent of pressures (15-100 mTorr) and rf powers (10-100 W). This suggests that surface reactions rather than gas phase reactions may primarily be responsibile for the radical loss. The surface loss probability s of CF3 and CF2 radicals was estimated in this well-defined system to be s=0.012 and 0.014, respectively.

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10.1143/JJAP.32.L353