Brought to you by:

Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy

and

Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Makoto Kasu Makoto Kasu and Takashi Fukui Takashi Fukui 1992 Jpn. J. Appl. Phys. 31 L864 DOI 10.1143/JJAP.31.L864

1347-4065/31/7A/L864

Abstract

We studied MOCVD-grown GaAs (001) vicinal surfaces by atomic force microscopy (AFM) and observed multi-atomic steps (multisteps) of several-monolayers height. The multisteps become straight as the AsH3 partial pressure increases and when the misorientation direction is [bar 110]. As growth proceeds, first, multisteps, i.e., step bunches, form and then the average distance between multisteps saturates. The multistep straightening and the multistep formation mechanisms are discussed.

Export citation and abstract BibTeX RIS

Please wait… references are loading.
10.1143/JJAP.31.L864