Abstract
Atomic-scale observation of chemical vapor deposition (CVD)-diamond/silicon interface structures was successfully performed by applying a focused-ion-beam (FIB) technique for preparing the cross-sectional samples. Several severe conditions such as weak adhesion and extreme difference in sputtering yield have virtually prevented the proper processing of the interface cross sections by only the conventional method. A sample preparation procedure is proposed with some specific devices for extreme thinning, sufficient for high-resolution transmission electron microscope (HRTEM) observation, emphasizing the good potential for wider practical use.