Abstract
Sub- and above threshold defects were introduced in n-type OMVPE grown GaAs during 3 keV and 3 MeV electron irradiation, respectively. The electrical properties of these defects were determined by DLTS measurements in samples that contained subthreshold defects only, above threshold defects only, as well as samples that contained both types of defects. A careful examination of the low temperature DLTS peaks revealed that although the sub- and above threshold defects have similar properties, they are nevertheless distinguishable from each other and are therefore not the same as has previously been speculated.