Abstract
The substrate temperature dependence of ZnSe growth rate is investigated using dimethyl zinc and diethyl zinc as Zn sources in metalorganic molecular beam epitaxy under the same flux intensity conditions. The growth rate for dimethyl zinc is higher at substrate temperatures above 450°C, and more sensitive to changes in substrate temperature than the growth rate for diethyl zinc. The mechanism resulting in the growth rate difference observed in this study is discussed in relation to the desorption process preceding ZnSe congruent evaporation.