SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD

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Copyright (c) 1988 The Japan Society of Applied Physics
, , Citation Tsugunori Takanohashi et al 1988 Jpn. J. Appl. Phys. 27 L113 DOI 10.1143/JJAP.27.L113

1347-4065/27/1A/L113

Abstract

SIMS and DLTS measurements have been carried out on Fe-doped InP epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Fe was doped with ferrocene Fe(C5H5)2 and smoothly distributed in the epitaxial layers. The solubility limit of Fe is 7×1016 cm-3 at a growth temperature of 650°C. A new electrically active defect was observed in InP doped with the excess concentration of Fe over the solubility limit.

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10.1143/JJAP.27.L113