Properties of Photoluminescence from ZnTe–ZnSe Superlattices

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Copyright (c) 1986 The Japan Society of Applied Physics
, , Citation Hiroshi Kuwabara et al 1986 Jpn. J. Appl. Phys. 25 L707 DOI 10.1143/JJAP.25.L707

1347-4065/25/9A/L707

Abstract

Excitation spectra and temperature dependence measurements of the photoluminescence(PL) were carried out for the various kinds of the ZnTe–ZnSe superlattices (SLs) prepared by hot wall epitaxy. First observation of strong absorption band by about 0.2 eV above the PL emission band and observed activation energy (0.2 eV) of the thermal quenching which are independent of the SL structures suggest that the PL is related to the radiative recombinations between band edge and localized centers, i.e. Free-to-Bound transitions.

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10.1143/JJAP.25.L707