Observation of X-Ray Diffraction Spots from the (√3 ×√3)R30° Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle

, , , and

Copyright (c) 1985 The Japan Society of Applied Physics
, , Citation Toshio Takahashi et al 1985 Jpn. J. Appl. Phys. 24 L727 DOI 10.1143/JJAP.24.L727

1347-4065/24/9A/L727

Abstract

X-ray diffraction intensities from the (√3 ×√3)R30° Bi structure on the Si(111) clean surface were measured in an experimental geometry similar to that of LEED. Two diffraction spots of 1/3, 1/3 and 2/3, 2/3 were observed at the scattering angle of 133° for X-rays with the wavelength of 1.76 Å. A silicon wafer about 5 µm thick was used to reduce the background scattering from the bulk crystal.

Export citation and abstract BibTeX RIS

10.1143/JJAP.24.L727