Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Ge–S Glasses

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Copyright (c) 1984 The Japan Society of Applied Physics
, , Citation Naoki Kumagai et al 1984 Jpn. J. Appl. Phys. 23 1287 DOI 10.1143/JJAP.23.1287

1347-4065/23/10R/1287

Abstract

Photo-induced ESR and its annealing behavior in melt-quenched GeSx (x=1.5, 0.8 and 2) glasses have been studied. Measurement of the effect of gamma-ray irradiation on the photo-induced ESR reveals the important role of quenched-in dangling bonds in the photo-enhancement of the ESR signal. The isothermal and isochronal annealing behavior of the photo-induced ESR in GeSx (x=1.5, 1.8 and 2) glasses can be explained in terms of a first-order reaction in which a Gaussian distribution of the activation energy is assumed.

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10.1143/JJAP.23.1287