Effect of Mn Doping on the Dielectric Properties of Ba2Ti9O20 Ceramics at Microwave Frequency

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Copyright (c) 1983 The Japan Society of Applied Physics
, , Citation Shoichiro Nomura et al 1983 Jpn. J. Appl. Phys. 22 1125 DOI 10.1143/JJAP.22.1125

1347-4065/22/7R/1125

Abstract

The effect of Mn doping on the dielectric properties of Ba2Ti9O20 ceramics has been investigated at microwave frequency. The dielectric constant and the temperature coefficient are not sensitive to the addition of Mn, while the unloaded Q depends strongly upon it as well as on heat treatment at high temperature. A minute addition of Mn leads to an increase in the Q value. A high value of Q of more than 5200 was obtained at 9 GHz with the addition of 0.5∼1.0 mol% Mn.

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10.1143/JJAP.22.1125