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Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation

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Copyright (c) 1981 The Japan Society of Applied Physics
, , Citation Mitsuo Fukuda et al 1981 Jpn. J. Appl. Phys. 20 L87 DOI 10.1143/JJAP.20.L87

1347-4065/20/2/L87

Abstract

Generation and development of <100> dark line and dark spot defects (DLD/DSDs), and related increases in room temperature pulse threshold current are investigated on InGaAsP/InP double heterostructure (DH) lasers under 10 kA/cm2 forward current density and (250±25)°C junction temperature operation. The average development speed of <100> DLDs is estimated to be about 0.3 µm/h. Temperature rise is confirmed at DSDs with an infrared thermometer. These dark defects have geometrical correlation with etch pit features in the InGaAsP/InP heteroboundary. They are considered to be developed by carrier injection.

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10.1143/JJAP.20.L87