Abstract
The Si lattice temperature during pulsed-laser annealing has been measured by an interference method, namely a time-dependent optical reflectivity measurement on SOS. This method utilizes optical interference effects between the light reflected from the Si surface and that from the Si-sapphire interface. It was found that the Si lattice temperature increased to at least approximately 1000°C during pulsed-laser annealing. Additionally, this work clarifies the temperature dependence of the refractive index n(T) of Si for a wavelength of 6328 Å, i.e. n(T)=3.98+4.7×10-4T(°C).