High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition

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Published 18 December 2009 • ©2010 The Japan Society of Applied Physics
, , Citation Shinsuke Miyajima et al 2010 Appl. Phys. Express 3 012301 DOI 10.1143/APEX.3.012301

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1 Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan

2 Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan

Dates

  1. Received 27 October 2009
  2. Accepted 20 November 2009
  3. Published

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Abstract

We investigated hydrogenated aluminum oxide (a-Al1-xOx:H) as a high quality rear surface passivation layer of crystalline silicon solar cells. The a-Al1-xOx:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using a mixture of trimethylaluminum (TMA), carbon dioxide (CO2), and hydrogen (H2) at a low substrate temperature of about 200 °C. The ratio of CO2 to TMA during deposition and thermal annealing after the film deposition are the key factors in achieving high quality passivation. A 28-nm-thick a-Al1-xOx:H film deposited by PECVD showed a low surface recombination velocity of about 10 cm/s.

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10.1143/APEX.3.012301