Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors

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Published 9 January 2009 • ©2009 The Japan Society of Applied Physics
, , Citation Tetsuya Fujiwara et al 2009 Appl. Phys. Express 2 011001 DOI 10.1143/APEX.2.011001

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1 Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, U.S.A.

2 Materials Department, University of California, Santa Barbara, California 93106, U.S.A.

Dates

  1. Received 16 September 2008
  2. Accepted 30 November 2008
  3. Published

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1882-0786/2/1/011001

Abstract

The first demonstration of the m-plane AlGaN/GaN heterojunction field-effect transistor was reported. This transistor exhibited enhancement-mode operation, with the threshold voltage of +2.0 V owing to the nonpolar AlGaN/GaN heterojunction. The maximum drain–source current density and the maximum transconductance were 130 mA/mm at a gate–source voltage (Vgs) of +9 V and 25 mS/mm at Vgs = +8 V, respectively. The on-to-off ratio was over 106.

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