Abstract
In this paper, rubrene:MoO\(_{3}\) mixed films were deposited on quartz glass and p-Si substrates using thermal evaporation technique. We fabricated the devices based on rubrene:MoO\(_{3}\) mixed films in the form of Al/rubrene:MoO\(_{3}\)/p-Si/Al. The electrical characteristics of the rubrene:MoO\(_{3}\) film (with 1:1 weight ratio)-based devices were measured using Hall system. The results indicate the enhanced hole concentration and hole carrier mobility. In addition, the presence of charge transfer complexes leads to an increase of the conductivity and the contact between sample and electrode is almost Ohmic contact. To investigate the effect of MoO\(_{3}\), the rubrene:MoO\(_{3}\) mixed films with different concentrations of MoO\(_{3}\) were deposited using thermal evaporation technique and the Schottky barrier devices based on rubrene:MoO\(_{3\, }\)mixed films were fabricated. The electrical characteristics demonstrate that the charge transfer complex had been formed when rubrene and MoO\(_{3}\) mixed. Our results demonstrated improvement of the contact between electrode and sample in electronic devices.
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Acknowledgements
This work was supported by the Natural Science Foundation of Beijing City, China(Grant No. 4192016), the Funding for the Development Project of Beijing Municipal Education Commission of Science and Technology (Grant No. KZ201410005008), the National Natural Science Foundation of China(Grant No. 11674312)
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Li, R., Deng, J., Chen, L. et al. Preparation and electrical characterization of rubrene:MoO\(_{3}\) film. Eur. Phys. J. Spec. Top. 231, 1215–1219 (2022). https://doi.org/10.1140/epjs/s11734-022-00515-8
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DOI: https://doi.org/10.1140/epjs/s11734-022-00515-8