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Tunable electronic properties of AlAs/InP heterostructure via external electric field and uniaxial strain

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Abstract

In this study, first-principles calculations based on the density functional theory are used to systematically discuss the geometry structures and optoelectronic properties of the AlAs/InP van der Waals heterostructure (vdWH). According to our results, the AlAs/InP heterostructure is a sort of direct band gap semiconductor whose immanent type-II band arrangement can effectively prevent the recombination of photogenerated electron and hole pairs. Due to charge transfer and interlayer coupling, the optical absorption range and capability of the AlAs/InP heterostructure are significantly superior to AlAs and InP monolayers. In addition, the external electric field and uniaxial strain can effectively modify the band structure of the AlAs/InP heterostructure, arising semiconductor-to-metal and direct-gap to indirect-gap transitions. The above results illustrate that the AlAs/InP heterostructure possesses potential applications in nanoelectronic and optoelectronic devices.

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Data Availability Statement

This manuscript has associated data in a data repository. [Authors’ comment: The datasets generated during and/or analyzed during the current study are not publicly available due (to privacy or other restrictions) but are available from the corresponding author on reasonable request].

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Acknowledgements

This work was supported by the National Key R&D Program of China (2018YFB1600200), the Major Project of International Scientific and Technological Cooperation Plan in Shaanxi (2020KWZ-008), the Natural Science Foundation of Shaanxi Province (2021GY-255) and the Fundamental Research Funds for the Central Universities CHD (300102312401).

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Author notes

  1. Jiaheng Zhao and Lijun Luan contributed equally to this work.

Authors and Affiliations

  1. School of Materials Science and Engineering, Chang’an University, Xi’an, 710061, China

    Jiaheng Zhao, Lijun Luan, Jingliang Chen, Yan Zhang, Xing Wei, Jibin Fan, Lei Ni & Li Duan

  2. School of Materials Science and Engineering, Chang’an University, Xi’an, 710018, China

    Chongrong Yuan

  3. School of Information Engineering, Chang’an University, Xi’an, 710061, China

    Chen Liu & Yun Yang

  4. School of Physics, Shandong University, Jinan, 250100, China

    Jian Liu

  5. Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Ye Tian

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  1. Jiaheng Zhao
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Contributions

JZ helped in writing—original draft. LL worked in software. CY helped in methodology. JC helped in formal analysis. YZ helped in conceptualization. XW worked in supervision. JF worked in project administration. LN helped in funding acquisition. CL and YY helped in data curation. JL helped in validation. YT worked in resources. LD helped in writing—review and editing.

Corresponding author

Correspondence to Li Duan.

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Zhao, J., Luan, L., Yuan, C. et al. Tunable electronic properties of AlAs/InP heterostructure via external electric field and uniaxial strain. Eur. Phys. J. Plus 138, 488 (2023). https://doi.org/10.1140/epjp/s13360-023-04106-x

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