Abstract
Monitoring X-ray growth oscillations, i.e. temporal oscillations of the X-ray reflectivity during thin film growth, is an important technique for in-situ and real-time characterization of heteroepitaxy. Here we demonstrate the simultaneous acquisition and analysis of not only one, but a set of growth oscillations in a wide range of the reciprocal space (q-space). Importantly, the combined information of these growth oscillations removes ambiguities inherent in the analysis of a single (anti-Bragg) oscillation. Wide q-range measurements also enlarge the accessible parameter range in film thickness and roughness, as measurements at optimized q-values exhibit a larger amplitude and lower damping during growth. As an example we analyze oscillations at \(q={\raise.5ex\hbox{$\scriptstyle 1$}\kern-.1em/ \kern-.15em\lower.25ex\hbox{$\scriptstyle 2$}}\), \({\raise.5ex\hbox{$\scriptstyle 2$}\kern-.1em/ \kern-.15em\lower.25ex\hbox{$\scriptstyle 3$}}\), \({\raise.5ex\hbox{$\scriptstyle 3$}\kern-.1em/ \kern-.15em\lower.25ex\hbox{$\scriptstyle 4$}}\ldots,q_{\textrm{Bragg}}\) during molecular beam deposition of the organic semiconductor diindenoperylene using kinematic scattering theory. From this we derive the growth mode and the surface roughening with film thickness.
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Kowarik, S., Gerlach, A., Skoda, M.W.A. et al. Real-time studies of thin film growth: Measurement and analysis of X-ray growth oscillations beyond the anti-Bragg point. Eur. Phys. J. Spec. Top. 167, 11–18 (2009). https://doi.org/10.1140/epjst/e2009-00930-y
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DOI: https://doi.org/10.1140/epjst/e2009-00930-y