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Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

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Abstract

Epitaxial layers of a new wide-band semiconductor (α-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had n-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial α-Ga2O3 layers on smooth and patterned substrates have been identified by X-ray diffractometry.

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Funding

This study was supported by the Russian Science Foundation, project no. 19-19-00409.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. I. Nikolaev, A. I. Pechnikov, L. I. Guzilova, A. V. Chikiryaka, M. P. Shcheglov & S. I. Stepanov

  2. National University of Science and Technology MISiS (Moscow Institute of Steel and Alloys), 119049, Moscow, Russia

    V. I. Nikolaev, A. I. Pechnikov, L. I. Guzilova, S. I. Stepanov, A. A. Vasil’ev, I. V. Shchemerov & A. Ya. Polyakov

  3. Perfect Crystals LLC, 194064, St. Petersburg, Russia

    V. V. Nikolaev & S. I. Stepanov

Authors
  1. V. I. Nikolaev
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  2. A. I. Pechnikov
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  3. L. I. Guzilova
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  4. A. V. Chikiryaka
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  5. M. P. Shcheglov
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  6. V. V. Nikolaev
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  7. S. I. Stepanov
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  8. A. A. Vasil’ev
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  9. I. V. Shchemerov
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  10. A. Ya. Polyakov
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Correspondence to V. I. Nikolaev.

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Translated by D. Safin

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Nikolaev, V.I., Pechnikov, A.I., Guzilova, L.I. et al. Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate. Tech. Phys. Lett. 46, 228–230 (2020). https://doi.org/10.1134/S106378502003013X

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  • DOI: https://doi.org/10.1134/S106378502003013X

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