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Forming n-p junctions based on p-CdHgTe with low charge carrier density

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Abstract

The first results on the formation of n +-p photodiodes with a long-wavelength boundary at λ0.5 = 10.6 μm based on p-CdHgTe epilayers with a hole density of 3.3 × 1014 cm−3 are presented. The CdHgTe layers were obtained by molecular beam epitaxy and exhibited p-type conduction in the as-grown state. The hole density and mobility were determined by means of the mobility spectrum technique. The photodiode structures were prepared by B+ ion implantation into as-grown p-CdHgTe epilayers without additional annealing. The R 0 A product for the n +-p photodiodes obtained is about 20 Θ cm2 at 77 K.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. V. Vasil’ev, S. A. Dvoretskiĭ, N. N. Mikhaĭlov, D. Yu. Protasov & R. N. Smirnov

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  1. V. V. Vasil’ev
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  2. S. A. Dvoretskiĭ
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  3. N. N. Mikhaĭlov
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  4. D. Yu. Protasov
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  5. R. N. Smirnov
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Original Russian Text © V.V. Vasil’ev, S.A. Dvoretskiĭ, N.N. Mikhaĭlov, D.Yu. Protasov, R.N. Smirnov, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 18, pp. 50–57.

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Vasil’ev, V.V., Dvoretskiĭ, S.A., Mikhaĭlov, N.N. et al. Forming n-p junctions based on p-CdHgTe with low charge carrier density. Tech. Phys. Lett. 32, 802–805 (2006). https://doi.org/10.1134/S1063785006090203

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  • DOI: https://doi.org/10.1134/S1063785006090203

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