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Unoccupied Electron States of Ultrathin Quaterphenyl Films on the Surfaces of Layered CdS and Oxidized Silicon

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Abstract

Some results of studying the unoccupied electron states and the formation of a boundary potential barrier during the thermal vacuum deposition of ultrathin 4-quaterphenyl oligophenyl films onto the surfaces of CdS and oxidized silicon were presented. Using X-ray photoelectron spectroscopy (XPS), the atomic Cd and S concentrations were established to be the same on the surface of a 75-nm CdS layer formed by atomic layer deposition (ALD). The electron characteristics of 4-quaterpheyn films with a thickness of up to 8 nm were studied in the process of their deposition onto the surface of a formed CdS layer and the surface of oxidized silicon by total current spectroscopy (TCS) within an energy range from 5 to 20 eV above EF. The energy positions of major maxima in the fine structure of the total current spectra (FSTCS) of 4-quaterphenyl films were established. The positions of maxima were reproducible, when the two selected materials of substrates were used. A slight decrease in the work function from 4.2 to 4.1 eV during the thermal deposition of 4-quaterpheynl onto the CdS surface was established. The work function was revealed to grow from 4.2 to 4.5 eV, when a 4-quaterphenyl film was deposited onto the surface of oxidized silicon. Some possible mechanisms of physicochemical interaction between the 4-quaterphenyl film and the surfaces of the studied substrates that lead to different work function values observed on these substrates were discussed.

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ACKNOWLEDGMENTS

This study was carried out on the equipment of the Research Park of Saint-Petersburg State University “Physical Methods of Surface Investigations” and “Innovative Technologies of Composite Nanomaterials.”

Funding

The TCS studies of 4-quaterphenyl films on silicon were supported by the Russian Science Foundation (grant no. 19-13-00021). The surface studies of formed CdS were sponsored by the Russian Foundation for Basic Research (grant no. 20-03-00026).

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Authors and Affiliations

  1. St. Petersburg State University, 199034, St. Petersburg, Russia

    A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev & E. V. Zhizhin

  2. Institute of Physics of Molecules and Crystals, Ufa Federal Research Center, Russian Academy of Sciences, 450054, Ufa, Russia

    S. A. Pshenichnuk & N. L. Asfandiarov

  3. Faculty of Material Science and Ceramics, AGH University of Science and Technology, 30059, Kraków, Poland

    B. Handke

Authors
  1. A. S. Komolov
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  2. E. F. Lazneva
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  3. N. B. Gerasimova
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  4. V. S. Sobolev
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  5. E. V. Zhizhin
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  6. S. A. Pshenichnuk
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  7. N. L. Asfandiarov
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  8. B. Handke
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Correspondence to A. S. Komolov.

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Translated by G. Glushachenkova

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Komolov, A.S., Lazneva, E.F., Gerasimova, N.B. et al. Unoccupied Electron States of Ultrathin Quaterphenyl Films on the Surfaces of Layered CdS and Oxidized Silicon. Phys. Solid State 63, 1205–1210 (2021). https://doi.org/10.1134/S1063783421080138

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  • DOI: https://doi.org/10.1134/S1063783421080138

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