Abstract
Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of ~300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy.
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Original Russian Text © A.A. Toropov, E.A. Shevchenko, T.V. Shubina, V.N. Jmerik, D.V. Nechaev, G. Pozina, S.V. Ivanov, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 11, pp. 2180–2185.
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Toropov, A.A., Shevchenko, E.A., Shubina, T.V. et al. AlGaN nanostructures with extremely high quantum yield at 300 K. Phys. Solid State 58, 2261–2266 (2016). https://doi.org/10.1134/S1063783416110366
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DOI: https://doi.org/10.1134/S1063783416110366