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Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

Nanocrystalline phases and GaAlP films are obtained by implanting Al+ ions with E0 = 1 keV at different doses on the surface of a GaP(111) single crystal, and their electronic and crystalline structures are studied. It is shown that the type and the lattice parameters of the three-component nanostructure are in good agreement with those for the substrate. The relationship between the band gap Eg and the sizes of the nanocrystalline phases is studied. It is established that quantum-size effects arise in the Ga0.6Al0.4P nanocrystalline phases in the case of surface sizes d of phases of less than 35–40 nm (3.5–4 nm thick).

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REFERENCES

  1. T. N. Zavaritskaya, A. V. Kvit, N. N. Mel’nik, and V. A. Karavanskii, Semiconductors 32, 213 (1998).

    Article  ADS  Google Scholar 

  2. V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, V. Yu. Rud’, and Yu. V. Rud’, Semiconductors 32, 1075 (1998).

    Article  ADS  Google Scholar 

  3. P. V. Seredin, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and T. Prutskij, Semiconductors 47, 1 (2013).

    Article  ADS  Google Scholar 

  4. Su-Huai Wei and A. Zunger, Phys. Rev. B 49, 14337 (1994).

    Article  ADS  Google Scholar 

  5. O. I. Rumyantsev, P. N. Brunkov, E. V. Pirogov, and A. Yu. Egorov, Semiconductors 44, 893 (2010).

    Article  ADS  Google Scholar 

  6. P. R. C. Kent and A. Zunger, Phys. Rev. B 64, 115208 (2001).

    Article  ADS  Google Scholar 

  7. M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, B. R. Semyagin, E. A. Emel’yanov, A. V. Vasev, A. F. Skochkov, G. I. Yurko, and I. I. Nesterenko, Tech. Phys. 64, 1010 (2019).

    Article  Google Scholar 

  8. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, D. H. Levi, and A. W. Y. Ho-Baillie, Prog. Photovolt.: Res. Appl. 25, 3 (2016).

    Article  Google Scholar 

  9. A. F. Dyadenchuk and V. V. Kidalov, Nano- Elektron. Fiz. 7, 01021 (2015).

    Google Scholar 

  10. B. E. Umirzakov, T. S. Pugacheva, A. T. Tashatov, and D. A. Tashmukhamedova, Nucl. Instrum. Methods Phys. Res. Phys. Res., Sect. B 166–167, 572 (2000). https://doi.org/10.1016/S0168-583X(99)01151-9

  11. Z. A. Isakhanov, Z. E. Mukhtarov, B. E. Umirzakov, and M. K. Ruzibaeva, Tech. Phys. 56, 546 (2011).

    Article  Google Scholar 

  12. S. B. Donaev, F. Djurabekova, D. A. Tashmukhamedova, and B. E. Umirzakov, Phys. Status Solidi C 12, 89 (2015).

    Article  ADS  Google Scholar 

  13. B. E. Umirzakov, M. T. Normuradov, D. A. Tashmukhamedova, and A. K. Tashatov, Nanomaterials and Prospects for Their Application (MERIYUS, Tashkent, 2008) [in Russian].

    Google Scholar 

  14. Kh. Kh. Boltaev, D. A. Tashmukhamedova, and B. E. Umirzakov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 8, 326 (2014).

    Article  Google Scholar 

  15. S. B. Donaev, B. E. Umirzakov, and D. A. Tashmukhamedova, Tech. Phys. 60, 1563 (2015).

    Article  Google Scholar 

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Authors and Affiliations

  1. Tashkent State Technical University, 100095, Tashkent, Uzbekistan

    S. B. Donaev & B. E. Umirzakov

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  1. S. B. Donaev
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  2. B. E. Umirzakov
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Correspondence to S. B. Donaev.

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Translated by V. Bukhanov

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Donaev, S.B., Umirzakov, B.E. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface. Semiconductors 54, 860–862 (2020). https://doi.org/10.1134/S1063782620080072

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  • DOI: https://doi.org/10.1134/S1063782620080072

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