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Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

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Abstract

The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of photoluminescence measurements are indicative of the high structural perfection of the films, and Hall data combined with low-energy ion treatment point to a low concentration of residual donors (∼5 × 1014 cm−3). Acceptor states supposedly related to the capture of impurities at structural defects typical of strongly lattice-mismatched heteroepitaxial structures are found in the films.

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Authors and Affiliations

  1. Lviv Scientific Research Institute of Materials of SRC “Carat”, Lviv, 79031, Ukraine

    I. I. Izhnin, A. I. Izhnin & H. V. Savitskyy

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    K. D. Mynbaev, N. L. Bazhenov & A. V. Shilyaev

  3. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 632090, Russia

    M. V. Yakushev, A. V. Sorochkin, V. S. Varavin & S. A. Dvoretsky

  4. Franko National University, Lviv, 79000, Ukraine

    E. I. Fitsych

  5. Institute of Physics, Polish Academy of Sciences, Warsaw, 02-668, Poland

    R. Jakiela

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  1. I. I. Izhnin
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  2. K. D. Mynbaev
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  3. M. V. Yakushev
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  6. N. L. Bazhenov
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  8. H. V. Savitskyy
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  12. S. A. Dvoretsky
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Corresponding author

Correspondence to K. D. Mynbaev.

Additional information

Original Russian Text © I.I. Izhnin, K.D. Mynbaev, M.V. Yakushev, A.I. Izhnin, E.I. Fitsych, N.L. Bazhenov, A.V. Shilyaev, H.V. Savitskyy, R. Jakiela, A.V. Sorochkin, V.S. Varavin, S.A. Dvoretsky, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 10, pp. 1363–1367.

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Izhnin, I.I., Mynbaev, K.D., Yakushev, M.V. et al. Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates. Semiconductors 46, 1341–1345 (2012). https://doi.org/10.1134/S1063782612100065

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  • DOI: https://doi.org/10.1134/S1063782612100065

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