Skip to main content
SpringerLink
Log in

High-voltage (3.3 kV) 4H-SiC JBS diodes

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

High-voltage 4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated and studied. The working area of the diodes (anode contact area) is 1.44 mm2. At currents in the range from 10−11 to 1.5 A, the forward current-voltage characteristic of the diodes is described in terms of the thermionic emission model, with the series resistance taken into account: Schottky barrier height ΦB = 1.16 eV, ideality factor n = 1.01, and series resistance R s = 2.2 Ω (32 mΩ cm2). The value of R s is governed by the resistance of the blocking epitaxial n-base (impurity concentration N = 9 × 1014 cm−3, n-layer thickness d = 34 μm). The diodes can block a reverse voltage of at least 3.3 kV (with a leakage current at room temperature on the order of 1 μA). It is suggested that the leakage mechanism is associated with crystal lattice defects (dislocations) in SiC. It is shown that the reverse-recovery characteristics of the diodes are determined by the flow of a purely capacitive reverse current.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Slabukhin, Komponent. Tekhnol., No. 2, 114 (2005).

  2. A. Polishchuk, Silov. Elektron. No. 1, 34 (2006).

  3. http://www.cree.com/products/power-docs2.asp

  4. I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, and T. P. Samsonova, Fiz. Tekh. Poluprovodn. 42, 211 (2008) [Semiconductors 42, 211 (2008)].

    Google Scholar 

  5. P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, T. P. Samsonova, and A. S. Potapov, Fiz. Tekh. Poluprovodn. 43, 527 (2009) [Semiconductors 43, 505 (2009)].

    Google Scholar 

  6. P. A. Ivanov, I. V. Grekhov, A. S. Potapov, N. D. Il’inskaya, T. P. Samsonova, and O. I. Kon’kov, Fiz. Tekh. Poluprovodn. 43, 1249 (2009) [Semiconductors 43, 1209 (2009)].

    Google Scholar 

  7. I. V. Grekhov, P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. I. Kon’kov, and N. D. Il’inskaya, Patent RF No. 2390880 (Priority from May 25, 2009).

  8. I. V. Grekhov, P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. I. Kon’kov, and N. D. Il’inskaya, Patent RF No. 2395868 (Priority from June 5, 2009).

  9. G. Pensl, F. Ciobanu, and T. Frank, Int. J. High. Speed Electron. Syst. 15, 705 (2005).

    Article  Google Scholar 

  10. P. A. Ivanov, I. V. Grekhov, A. S. Potapov, T. P. Samsonova, N. D. Il’inskaya, O. I. Kon’kov, and O. Yu. Serebrennikova, Fiz. Tekh. Poluprovodn. 44, 680 (2010) [Semiconductors 44, 653 (2010)].

    Google Scholar 

  11. Q. Wahab, A. Ellison, A. Henry, E. Janzen, C. Hallin, J. Di Persio, and R. Martinez, Appl. Phys. Lett. 76, 2725 (2000).

    Article  ADS  Google Scholar 

  12. B. Hull, J. Sumakeris, M. O’Loughlin, J. Zhang, J. Richmond, A. Powell, M. Paisley, V. Tsvetkov, A. Hefner, and A. Rivera, Mater. Sci. Forum 600–603, 931 (2009).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov, T. P. Samsonova & O. U. Serebrennikova

Authors
  1. P. A. Ivanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. V. Grekhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. D. Il’inskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. O. I. Kon’kov
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. S. Potapov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. T. P. Samsonova
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. O. U. Serebrennikova
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, I.V. Grekhov, N.D. Il’inskaya, O.I. Kon’kov, A.S. Potapov, T.P. Samsonova, O.U. Serebrennikova, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 5, pp. 677–681.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ivanov, P.A., Grekhov, I.V., Il’inskaya, N.D. et al. High-voltage (3.3 kV) 4H-SiC JBS diodes. Semiconductors 45, 668–672 (2011). https://doi.org/10.1134/S1063782611050125

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782611050125

Keywords

Search

Navigation