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Thermal-resistant TiB x -n-GaP Schottky diodes

  • Physics of Semiconductor Devices
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Abstract

The effect of rapid thermal annealing on the parameters of TiB x -n-GaP Schottky barriers and interphase interactions at the TiB x -GaP interface are studied. It is shown that the contact TiB x -n-GaP system features an increased thermal stability without varying the electrical parameters of the Schottky barrier at temperatures as high as 600°C.

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Correspondence to N. S. Boltovets.

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Original Russian Text © A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, A.B. Kamalov, L.M. Kapitanchuk, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, V.V. Milenin, M.U. Nasyrov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 4, pp. 463–467.

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Belyaev, A.E., Boltovets, N.S., Ivanov, V.N. et al. Thermal-resistant TiB x -n-GaP Schottky diodes. Semiconductors 42, 453–457 (2008). https://doi.org/10.1134/S1063782608040143

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  • DOI: https://doi.org/10.1134/S1063782608040143

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