Abstract
Silicon nanowire samples fabricated by thermal evaporation of SiO powder were investigated by Cathodoluminescence. Three main bands were found at low temperatures, namely, peak 1 at about 620–650 nm (2.0–1.91 eV), peak 2 at 920 nm (1.35 eV), and peak 3 at 1280 nm (0.97 eV). An additional broad band (peak 4) in the infrared region with its maximum at ∼1570 nm (0.79 eV) appears at room temperature. The origins of the emission bands are discussed.
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Jia, G., Arguirov, T., Kittler, M. et al. Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO. Semiconductors 41, 391–394 (2007). https://doi.org/10.1134/S1063782607040057
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DOI: https://doi.org/10.1134/S1063782607040057