Abstract
Reflection of infrared radiation from n-InP substrates with a rear MgF2/Au mirror is investigated in the wavelength range 1000–2200 nm. It is found that the reflectance weakly depends on substrate thickness and free-carrier concentration in the (0.1–6) × 1018 cm−3 range. Thermophotovoltaic cells based on the InP/In0.53Ga0.47As lattice-matched heterostructure of p-n and n-p are fabricated by liquid-phase epitaxy and Zn and P diffusion from a gas phase. The characteristics of p-n and n-p thermophotovoltaic cells with an identical configuration of the contacts of 1 cm2 area are determined. These characteristics are the open-circuit voltage U oc = 0.465 V, the filling factor FF = 64% at the current density of 1 A/cm2, and the reflectance R = 76–80% for wavelengths longer than 1.86 μm.
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Original Russian Text © L.B. Karlina, A.S. Vlasov, M.M. Kulagina, N.Kh. Timoshina, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 3, pp. 351–355.
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Karlina, L.B., Vlasov, A.S., Kulagina, M.M. et al. Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures. Semiconductors 40, 346–350 (2006). https://doi.org/10.1134/S1063782606030171
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DOI: https://doi.org/10.1134/S1063782606030171