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Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics

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Abstract

Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO3/Si structure is described briefly.

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Authors and Affiliations

  1. Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow, 125080, Russia

    A. V. Zenkevich, Yu. Yu. Lebedinskii, Yu. A. Matveev, N. S. Barantsev, Yu. A. Voronov, A. V. Sogoyan & V. N. Nevolin

  2. Moscow Institute of Steel and Alloys (State Technical University), Leninskii pr. 4, Moscow, 119049, Russia

    V. I. Chichkov

  3. National Laboratory CNR-INFM-MDM Materials and Devices for Nanoelectronics, Agrate Brianza, Italy

    S. Spiga & M. Fanchulli

Authors
  1. A. V. Zenkevich
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  2. Yu. Yu. Lebedinskii
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  3. Yu. A. Matveev
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  4. N. S. Barantsev
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  5. Yu. A. Voronov
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  6. A. V. Sogoyan
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  7. V. N. Nevolin
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  8. V. I. Chichkov
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  9. S. Spiga
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  10. M. Fanchulli
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Corresponding author

Correspondence to Yu. A. Matveev.

Additional information

Original Russian Text © A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev, N.S. Barantsev, Yu.A. Voronov, A.V. Sogoyan, V.N. Nevolin, V.I. Chichkov, S. Spiga, M. Fanchulli, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 3, pp. 184–194.

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Zenkevich, A.V., Lebedinskii, Y.Y., Matveev, Y.A. et al. Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics. Russ Microelectron 39, 165–174 (2010). https://doi.org/10.1134/S1063739710030030

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  • DOI: https://doi.org/10.1134/S1063739710030030

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