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Formation of Microstructures with a Given 3D-Profile Based on Epitaxial Films of Rare-Earth Iron-Garnet Using the Method of Ionic Etching

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Abstract

The possibility of forming a given smooth 3D-profile of magnetic microstructures based on iron–garnet (BiY)3(FeAlGa)5O12 epitaxial films on Gd3Ga5O12 substrates by the ionic-plasma etching of the surface with a mask is experimentally investigated. Such thin-film magnetic microstructures are used to create ultra-sensitive magnetic-field sensors with a low noise level upon dynamic planar remagnetization. Surface etching is carried out using Ar+ ions in a high-frequency glow discharge plasma. It is shown that when the mask is applied to the film surface during ion etching an inhomogeneous plasma flow is formed at the edge of the mask, which is due to static charging of the dielectric surface of the mask and film. This leads to the formation of a smoothed profile at the edge of the film near the boundary of the etching area. Upon the creation of a gap between the mask and the film surface, a smoothed profile of the film edge near the boundary of the etching area is formed by the inhomogeneous distribution of the plasma flow due to the effect of the geometric penumbra. The width of the smoothed profile area can be controlled in the range from several to hundreds of micrometers by changing the height of the gap between the mask and the film surface.

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Funding

The study was supported by the Russian Science Foundation (grant no. 19-72-20 154).

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Authors and Affiliations

  1. Vernadsky Crimean Federal University, 295007, Simferopol, Russia

    O. A. Tomilina, A. A. Syrov, S. V. Tomilin & V. N. Berzhansky

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  1. O. A. Tomilina
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  2. A. A. Syrov
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  3. S. V. Tomilin
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  4. V. N. Berzhansky
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Correspondence to O. A. Tomilina.

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Tomilina, O.A., Syrov, A.A., Tomilin, S.V. et al. Formation of Microstructures with a Given 3D-Profile Based on Epitaxial Films of Rare-Earth Iron-Garnet Using the Method of Ionic Etching. J. Surf. Investig. 16, 843–846 (2022). https://doi.org/10.1134/S1027451022050378

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  • DOI: https://doi.org/10.1134/S1027451022050378

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