Abstract
The spectral dependences (λ = 0.35–1.0 μm) of transmittance and reflectance R of binary TiAlN nitride thin films deposited by magnetron sputtering of the target on glass substrates and on Si wafers have been measured. TiAlN/Si films 0.5 μm thick were exposed to single nanosecond (70 ns) pulses of ruby laser radiation in order to study the effect of thermophysical processes laser-induced in TiAlN on the dynamics of R(t) at probe wavelengths λ1 = 0.53 μm and λ2 = 1.06 μm and on the state of the zones of laser irradiation, which was studied by optical and scanning electron microscopy. The dynamic change of R increase at λ1 and decrease at λ2 associated with pulsed heating of the film and which is observed in the experiment increases as irradiation energy density W increases with the approach to the threshold energy of laser ablation of nitride of ~1 J/cm2. Laser-induced thermophysical processes occurring at W = 0.6–0.9 J/cm2 lead to specific modification of the TiAlN layer with the formation of a grid of cracks due to thermal stresses arising during the action of the laser pulse. Increasing W results in a more developed cellular/mesh film structure characterized by a smaller average cell size.
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REFERENCES
A. D. Pogrebnyak, A. A. Drobyshevskaya, V. M. Beresnev, M. K. Kylyshkanov, T. V. Kirik, S. N. Dub, F. F. Komarov, A. P. Shipilenko, and Yu. Zh. Tuleushev, Tech. Phys. 56, 1023 (2011).
T. Leyendecker, O. Lemmer, S. Esser, and J. Ebberink, Surf. Coat. Technol. 48, 175 (1991).
J. Vetter, Surf. Coat. Technol. 719, 76 (1995).
F. F. Komarov, S. V. Konstantinov, V. E. Strel’nitskij, and V. V. Pil’ko, Tech. Phys. 61, 696 (2016).
N. Yasumaru, K. Miyazaki, and J. Kiuchi, Appl. Phys. A 76, 983 (2003).
N. Yasumaru, K. Miyazaki, and J. Kiuchi, Appl. Phys. A 81, 933 (2005).
B. Gakovic, M. Trtica, D. Batani, et al., J. Opt. A 9, 76 (2007).
B. Gakovic, M. Trtica, B. Radak, et al., J. Opt. A 11, 1 (2009).
Seol Jeon and Heesoo Lee, J. Korean Ceram. Soc. 50, 523 (2013).
J. Deng, S. Li, Y. Xing, and Y. Li, Surf. Eng. 30, 195 (2014).
G. D. Ivlev and E. I. Gatskevich, Tech. Phys. 57, 803 (2012).
G. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, G. D. Ivlev, and S. L. Prokop’ev, Tech. Phys. 60, 406 (2015).
A. N. Mikhailov, E. V. Sidorova, and D. V. Volokhov, in Progressive Technology and Nachine Building Systems, International Collection of Articles (2011), No. 41, p. 225.
A. R. Regel’ and V. M. Glazov, Physical Properties of Electronic Melts (Nauka, Moscow, 1980) [in Russian].
G. D. Ivlev and E. I. Gatskevich, Semiconductors 30, 1093 (1996).
V. A. Pilipovich, V. L. Malevich, G. D. Ivlev, and V. V. Zhidkov, Inzhen. Fiz. Zh. 48, 306 (1985).
E. I. Gatskevich, G. D. Ivlev, and O. R. Lyudchik, in Proceedings of the 26th International Conference on Radiation Physics of Solid State (NII PMT, Moscow, 2016), p. 116.
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This work was financially supported by the Ministry of Education of the Republic of Belarus on assignment 2.18.1 of the State Scientific and Technical Program “Physical materials science, new materials and technologies.”
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Translated by N. Petrov
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Ivlev, G.D., Zaikov, V.A., Klimovich, I.M. et al. The Nanosecond Effect of Intense Laser Radiation on Thin TiAlN Films. Opt. Spectrosc. 128, 141–147 (2020). https://doi.org/10.1134/S0030400X20010117
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DOI: https://doi.org/10.1134/S0030400X20010117