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Temperature Dependence of Circularly Polarized Radiation of an Injection Semiconductor Laser

  • OPTICS AND LASER PHYSICS
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The temperature dependence of stimulated laser radiation with a high degree of circular polarization in chiral semiconductor nanostructures has been investigated in the temperature range from liquid-helium temperatures to ~140 K. Investigations have been performed on electrically pumped semiconductor laser structures based on planar microcavities with GaAs quantum wells inside and a periodic square lattice of a chiral-symmetry photonic crystal, formed as a result of partial etching in the upper Bragg mirror. Developed multimode lasing in the form of very narrow spectral bands with a high degree of circular polarization of radiation (>70%) up to temperatures of ~90 K was observed at maximum values of the pulsed current flowing through the sample.

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ACKNOWLEDGMENTS

We are grateful to V.D. Kulakovskii and S.G. Tikhodeev for numerous fruitful discussions, as well as to S. Höffling and C. Schneider for supplying experimental samples.

Funding

This study was supported in part by the Russian Foundation for Basic Research, project no. 20-02-00534.

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Authors and Affiliations

  1. Osipyan Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

    A. A. Maksimov, E. V. Filatov & I. I. Tartakovskii

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  1. A. A. Maksimov
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  2. E. V. Filatov
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  3. I. I. Tartakovskii
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Correspondence to A. A. Maksimov.

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Translated by A. Sin’kov

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Maksimov, A.A., Filatov, E.V. & Tartakovskii, I.I. Temperature Dependence of Circularly Polarized Radiation of an Injection Semiconductor Laser. Jetp Lett. 116, 500–504 (2022). https://doi.org/10.1134/S0021364022601841

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  • DOI: https://doi.org/10.1134/S0021364022601841

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