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Ab initio search for novel bipolar magnetic semiconductors: Layered YZnAsO doped with Fe and Mn

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Abstract

Very recently, the newest class of spintronic materials, where reversible spin polarization can be controlled by applying gate voltage: so-called bipolar magnetic semiconductors (Xingxing Li et al., arXiv:1208.1355) was proposed. In this work, a novel way to creation of bipolar magnetic semiconductors by doping of non-magnetic semiconducting 1111 phases with magnetic d n < 10 atoms is discussed using ab initio calculations of layered YZnAsO doped with Fe and Mn. In addition, more complex materials with several spectral intervals with opposite 100% spin polarization where multiple gate-controlled spin-polarization can be expected are proposed.

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Authors and Affiliations

  1. Institute of Solid State Chemistry, Ural Branch, Russian Academy of Science, Yekaterinburg, 620990, Russia

    V. V. Bannikov & A. L. Ivanovskii

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  1. V. V. Bannikov
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  2. A. L. Ivanovskii
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Correspondence to A. L. Ivanovskii.

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Bannikov, V.V., Ivanovskii, A.L. Ab initio search for novel bipolar magnetic semiconductors: Layered YZnAsO doped with Fe and Mn. Jetp Lett. 96, 735–738 (2013). https://doi.org/10.1134/S0021364012230038

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  • DOI: https://doi.org/10.1134/S0021364012230038

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