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Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges

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Abstract

An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114–170 and 210–1100 nm ranges. It has been demonstrated that the avalanche photodiode reaches the quantum yield of 29 to 9300 electrons/photon at the 160 nm wavelength and bias voltage of 190–303 V, respectively.

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REFERENCES

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ACKNOWLEDGMENTS

The authors are grateful to their Ioffe Institute colleagues N.V. Zabrodskaya, M.S. Lazeeva, M.V. Drozdova, and V.I. Marshalova for the assistance in fabricating the photodiodes.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    P. N. Aruev, V. P. Belik, A. A. Blokhin, V. V. Zabrodskii, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov & E. V. Sherstnev

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  1. P. N. Aruev
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  2. V. P. Belik
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  3. A. A. Blokhin
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  4. V. V. Zabrodskii
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  5. A. V. Nikolaev
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  6. V. I. Sakharov
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  7. I. T. Serenkov
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  8. V. V. Filimonov
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  9. E. V. Sherstnev
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Correspondence to P. N. Aruev.

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The authors declare that they have no conflict of interests.

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In memoriam of E.M. Kruglov and V.V. Filimonov

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Aruev, P.N., Belik, V.P., Blokhin, A.A. et al. Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges. Tech. Phys. Lett. 49, 195–198 (2023). https://doi.org/10.1134/S1063785023900029

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  • DOI: https://doi.org/10.1134/S1063785023900029

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