Abstract
The influence of the conditions of gettering in high-resistivity silicon during fabrication of PIN photodiodes on reverse dark currents has been studied. It is shown that gettering using a combination of phosphorus ion implantation and deposition of a polysilicon film with subsequent doping of the substrate rear side with phosphorus at temperatures below 900°C leads to low values of the reverse dark current and increases the nonequilibrium carrier lifetime.
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Translated by A. Sin’kov
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Chistokhin, I.B., Fritzler, K.B. The Influence of the Conditions of Getter Formation in High-Resistivity Silicon on the Characteristics of PIN Photodiodes. Tech. Phys. Lett. 46, 1057–1059 (2020). https://doi.org/10.1134/S1063785020110048
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DOI: https://doi.org/10.1134/S1063785020110048